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| PD - 95646 IRG4PC40KPBF INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 42 25 84 84 10 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. 0.24 6 (0.21) Max. 0.77 40 Units C/W g (oz) 7/26/04 IRG4PC40KPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 Temperature Coeff. of Breakdown Voltage 0.46 2.10 Collector-to-Emitter Saturation Voltage 2.70 2.14 Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage -13 Forward Transconductance 7.0 14 Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Max. Units Conditions V VGE = 0V, IC = 250A V VGE = 0V, IC = 1.0A V/C VGE = 0V, IC = 1.0mA 2.6 IC = 25A VGE = 15V IC = 42A See Fig.2, 5 V IC = 25A , TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100 V, IC = 25A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 2000 VGE = 0V, VCE = 600V, TJ = 150C 100 n A VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t sc t d(on) tr t d(off) tf E ts LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. 120 16 51 30 15 140 140 0.62 0.33 0.95 30 18 190 150 1.9 13 1600 130 55 Max. Units Conditions 180 IC = 25A 24 nC VCC = 400V See Fig.8 77 VGE = 15V TJ = 25C ns 210 IC = 25A, VCC = 480V 210 VGE = 15V, RG = 10 Energy losses include "tail" mJ See Fig. 9,10,14 1.4 s VCC = 400V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V TJ = 150C, IC = 25A, VCC = 480V ns VGE = 15V, RG = 10 Energy losses include "tail" mJ See Fig. 11,14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. 2 www.irf.com IRG4PC40KPBF 60 For both: Triangular wave: Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 35W Load Current (A) 40 Clamp voltage: 80% of rated Square wave: 60% of rated voltage 20 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) TJ = 150C TJ = 25C 10 TJ = 150 o C 10 TJ = 25 oC 1 0.1 V GE = 15V 20s PULSE WIDTH 1 10 1 5 7 V CC = 50V 5s PULSE WIDTH A 9 11 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40KPBF 50 5.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 50 A Maximum DC Collector Current(A) 40 4.0 30 3.0 20 IC = 25 A 2.0 10 IC =12.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40KPBF 3000 2500 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 25A 16 C, Capacitance (pF) 2000 Cies 1500 12 8 1000 500 4 Coes Cres 1 10 0 0 0 20 40 60 80 100 120 140 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1.80 10 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage RG = 10Ohm VGE = 15V VCC = 480V Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 1.60 I C = 25A IC = 50 A IC = 25 A 1 1.40 IC = 12.5 A 1.20 1.00 0.80 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40KPBF 5.0 3.0 2.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 4.0 VGE = 10Ohm = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 10 1.0 SAFE OPERATING AREA 0.0 0 10 20 30 40 50 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC40KPBF L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X IC@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4PC40KPBF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 8 www.irf.com |
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